O.V. Konoreva
O.I. Radkevych
V.I. Slisenko
V.P. Tartachnyk
O.Ya. Olikh
V.M. Pavlovych
Affiliation:
Institute for Nuclear Research of the NAS of Ukraine
Project: Scientific book
Year: 2021
Publisher: PH "Naukova Dumka"
Pages: 198
DOI:
ISBN: 978-966-00-1737-5
Language: Ukrainian
How to Cite:
Konoreva, O.V., Radkevych, O.I., Slisenko, V.I., Tartachnyk, V.P. (2021). Influence of Structural Defects on the Physical Properties of Individual Aiiibv Semiconductor Compounds. Kyiv, Naukova Dumka. 198 p. [in Ukraine].
Abstract:
The monograph presents a literature data analysis, systematizeds and generalizes the results of many years research of structural damages in the AIIIBV group of semiconductors obtained at the Department of Radiation Physics of the Institute of Nuclear Research of the NAS of Ukraine. The specifics of radiation effect on the optical and electro-physical characteristics of the selected objects are analyzed. The influence of heat treatment on crystals structure defects is considered. The consequences of the degradation-relaxation processes of some ultrasonically treated AIIIBV compounds are described.
Intended for a wide range of scientists and specialists in areas of radiation of solid-state physics and semiconductor physics.
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