A.E. Belyaev
N.S. Boltovets
E.F. Venger
Ya.Ya. Kudryk
V.V. Milenin
G.V. Milenin
Affiliation:
Project: Ukrainian scientific book in a foreign language
Year: 2011
Publisher: PH “Akademperiodyka”
Pages: 182
DOI:
http://doi.org/10.15407/akademperiodyka.176.182
ISBN: 978-966-360-176-2
Language: English
How to Cite:
Abstract:
Keywords:
References:
1. S.I. Rebrov. PZhE no 3-4, 122-134, 2004.* https://doi.org/10.1001/archopht.122.1.134-b
2. Yu.P. Dokuchaev, V.F. Sinkevich, P.V. Taran. PZhE no 3-4, 135- 146, 2004.*
3. T.N. Narytnik, V.P. Babak, M.E. Il’chenko, S.A. Kravchuk. Microwave Technologies in Telecommunication Systems, Tekhnika, Kiev,2000.
4. V.E. Borisenko. Solid-Phase Processes in Semiconductors at Pulse Heating, Navuka i Tekhnika, Minsk, 1992.*
5. V.A. Pilipenko. Rapid Thermal Processing in VLSI Technology, Tsentr BGU, Minsk, 2004.*
6. V. Mironov. The Foundations of Scanning Probe Microscopy, Tekhnosfera, Moscow, 2005.*
7. G. Binning, H. Rohrer. Helv. Phys. Acta 55(6), 726-735, 1982.
8. Practical Surface Analysis – Auger and X-ray Photoelectron Spectroscopy (eds. D. Briggs, M.P. Seah), Wiley Interscience, 1990.
9. C. Feldman, J.W. Mayer, Fundamentals of Surface and Thin Film Analysis, North-Holland, New York−Amsterdam−London, 1986.
10. V.A. Burobin. PZhE no 3-4, 153-160, 2004.* https://doi.org/10.1016/j.ins.2003.08.012
11. I.E. Voronkov, S.P. Khodnevich, A.D. Khodnevich. ET Ser. 8, no 5(83), 11-23, 1980.*
12. I.E. Voronkov. ET Ser. 8, no 5(110), 3-7, 1984.*
13. I.E. Voronkov, A.D. Khodnevich. ET Ser. 1, no 12(324), 7-11, 1980.*
14. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*
15. I.L. Zaitsevskii, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. Phys. Stat. Sol. (a) 53, K153-K156, 1979. https://doi.org/10.1002/pssa.2210530246
16. I.E. Voronkov, A.D. Khodnevich, S.P. Khodnevich. ET Ser. 1, no 7, 103-105, 1976.*
17. I.E. Voronkov, N.A. Kozlov, A.N. Rabodzey, V.F. Sinkevich. ET Ser. 2, no 2, 82-86, 1988.*
18. A.M. Nechaev, V.F. Sinkevich. ET Ser. 8, no 3(114), 3-5, 1985.*
19. V.I. Faynberg. PTM no 32, 49-53, 1980.* https://doi.org/10.1353/boc.1980.0031
20. R.V. Konakova, V.I. Faynberg, L.V. Scherbina, M.Yu. Filatov. ET Ser. 2, no 5(164), 87-89, 1983.* ∗ In Russian (throughout the list of references)
21. R.V. Konakova, Yu.A. Tkhorik, V.I. Faynberg. ET Ser. 8, no 3(114), 24-29, 1985.*
22. E.A. Soloviev. ET Ser. 8, no 1(304), 57-58, 1989.* https://doi.org/10.2307/43629259
23. A.N. Rapoport, V.I. Faynberg. ET Ser. 2, no 2(205), 97-99, 1990.*
24. A.N. Rapoport, V.I. Faynberg. ET Ser. 8, no 1, 59, 1989.*
25. I.L. Zaitsevskii, R.V. Konakova, V.I. Shakhovtsov, Yu.A. Tkhorik. Sol. State Electron. 23(3), 401-403, 1980.* https://doi.org/10.1016/0038-1101(80)90209-9
26. R.V. Konakova, A.N. Rapoport, E.A. Soloviev, Yu.A. Tkhorik, V.I. Faynberg, M.Yu. Filatov, S.P. Khodnevich. Preprint no 1, Kiev, IP AN UkrSSR, 1990.*
27. I.L. Zaytsevskiy, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. In: Radiation Effects in Semiconductor Systems, 16-17, Naukova Dumka, Kiev, 1976.*
28. I.L. Zaytsevskiy, R.V. Konakova, G.N. Semenova, Yu.A. Tkhorik, M.Yu. Filatov. In: Plasma and Instabilities in Semiconductors, 119-120, Vaga, Vilnius, 1977.*
29. I.L. Zaytsevskiy, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 116-120, Naukova Dumka, Kiev, 1978.*
30. Yu.A. Tkhorik, R.V. Konakova, V.I. Faynberg. Vestnik AN UkrSSR no 10, 33-39, 1983.*
31. V.I. Fineberg, R.V. Konakova, L.V. Shcherbina, N.S. Boltovets. Phys. Stat. Sol. (a), 68(1), 39- 43, 1981. https://doi.org/10.1002/pssa.2210680105
32. A.D. Khodnevich, I.E. Voronkov. ET Ser. 1, no 11, 49-55, 1984.*
33. R.V. Konakova, P. Kordoš, Yu.A. Tkhorik, V.I. Faynberg, F. Štofanik. Reliability Prediction for the Semiconductor Avalanche Diodes, Naukova Dumka, Kiev, 1986.*
34. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Ve rimeychenko. SQO 4(1), 5-9, 2001.
35. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, V.A. Pilipenko. Interstitial Phases in the Technology of Semiconductor Devices and VLSI, NTK “Institute for Single Crystals”, Kharkov, 2008.*
36. L.A. Seidman. OET Ser. 2, no 6(1366), 1988.*
37. M.-A. Nicolet. Thin Solid Films 52(3), 415-443, 1978. https://doi.org/10.1016/0040-6090(78)90184-0
38. E.F. Uvarov. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 5-9, Naukova Dumka, Kiev, 1978.*
39. M.I. Markovich, E.N. Vologdin, P.T. Barmina. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 151-175, Naukova Dumka, Kiev, 1978.*
40. L.S. Smirnov, In: Proc. VII Winter School on Physics of Semiconductors, 232-244, LIYaF, Leningrad, 1975.*
41. Problems in Radiation Technology of Semiconductors (ed. L.S. Smirnov), Nauka SO AN SSSR, Novosibirsk, 1980.*
42. R.V. Konakova, Ю.А. Tkhorik, L.S. Khazan. In: Gallium Arsenide (ed. V.I. Gaman), 183-185, TGU, Tomsk, 1982.*
43. Yu.A. Tkhorik, L.S. Khazan. Plastic Deformation and Misfit Dislocations in Heteroepitaxial Systems, Naukova Dumka, Kiev, 1983.*
44. O.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.G. Litovchenko, Yu.A. Tkhorik, V.I. Shakhovtsov. Preprint IF AN UkrSSR no 6, 1986.*
45. T. Brozhek, V.Ya. Kiblik, V.G. Litovchenko, R.O. Litvinov, L.G. Plotnikova. Preprint IP AN UkrSSR no 4-88, 1988.*
46. R.V. Konakova, Ю.А. Tkhorik, L.S. Khazan. ET Ser. 2, no 2, 47-56, 1988.*
47. V.S. Vavilov, B.M. Gorin, N.S. Danilin, A.E. Kiv, Yu.L. Kurov, V.I. Shakhovtsov. Radiation Techniques in Solid-State Electronics, Radio i Svyaz’, Moscow, 1990.*
48. Radiation-Induced Processes in Silicon (ed. Sh.A. Vakhidov), FAN, Tashkent, 1977.*
49. Physical Properties of Irradiated Silicon (eds. M.S. Yunusov, L.P. Khiznichenko), FAN, Tashkent, 1987.*
50. Subthreshold Radiation Effects in Semiconductors (eds. M.S. Yunusov, L.P. Khiznichenko), FAN, Tashkent, 1989.*
51. A.P. Mamontov, I.P. Chernov. Effect of Low-Doze Ionizing Radiation, Energoatomizdat, Moscow, 2001.*
52. V.N. Brudnyi, V. Peshev, A.P. Surzhakov. Radiation-Induced Defect Production in Electric Fields. Gallium Arsenide, Indium Phosphide, Nauka, Novosibirsk, 2001.*
53. F.P. Korshunov, G.V. Gatal’skii, G.M. Ivanov. Radiation Effects in Semiconductor Devices, Nauka i Tekhnika, Minsk, 1978.*
54. F.P. Korshunov, Yu.V. Bogatyrev, V.A. Vavilov. Effect of Radiation on ICs, Nauka i Tekhnika, Minsk, 1986.*
55. E.R. Astvatsatur’yan, D.V. Gromov, V.M. Lomako. Radiation Effects in Gallium Arsenide Devices and ICs, Universitetskoe, Minsk, 1992.*
56. V.I. Strikha. Theoretical Foundations of Metal−Semiconductor Contact Operation, Naukova Dumka, Kiev, 1974.*
57. E.V. Buzaneva. Microstructures of Integrated Electronics, Radio i Svyaz’, Moscow, 1990.*
58. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal−Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*
59. V.V. Il’chenko, V.I. Strikha. FTP 18(5), 873-876, 1984.* https://doi.org/10.1016/0036-9748(84)90252-7
60. V.V. Il’chenko, V.G. Levandovskii, V.I. Strikha. UFZh 32(2), 290-295, 1987.*
61. V.V. Il’chenko, V.I. Strikha. Izv. Vuzov. Fizika no 2, 88-92, 1985.*
62. E.V. Buzaneva, V.G. Levandovskii, V.I. Strikha. RE 30(7), 1403-1408, 1985.*
63. A.M. Voskoboynikov, V.I. Strikha, D.I. Sheka. Vestn. Kievskogo Univ. Ser. Fizika no 25, 112- 119, 1984.*
64. A.N. Korol, D.I. Sheka. In: Schottky-Barrier Semiconductor Devices, 123-128, Naukova Dumka, Kiev, 1979.*
65. N.L. Dmitruk. Izv. Vuzov. Fizika no 1, 38-51, 1980.*
66. N.L. Dmitruk, О.Yu. Borkovskaya. ME 4(1), 64-70, 1979.*
67. N.L. Dmitruk, А.К. Tereschenko. ET Ser. 2, no 4, 68-72, 1973.*
68. A.P. Vyatkin, N.K. Maksimova, N.G. Filonov. Vestn. Tomskogo Gos. Univ. Ser. Fizika no 285, 121-128, 2005.*
69. V.G. Bozhkov, V.S. Lukash. Vestn. Tomskogo Gos. Univ. Ser. Fizika no 285, 129-138, 2005.*
70. Yu.A. Gol’dberg, D.N. Nasledov, B.V. Tsarenkov. PTE no 6, 180-184, 1966.*
71. T.V. Blank, Yu.A. Gol’dberg. FTP 41(11), 1281-1308, 2007.*
72. T.V. Blank, Yu.A. Gol’dberg, O.V. Konstantinov, V.G. Nikitin, E.A. Posse. FTP 40(10), 1204- 1208, 2006.* https://doi.org/10.1134/S1063782606100095
73. W. Schottky. Naturwissenschaften 26, 843, 1938. https://doi.org/10.1007/BF01774216
74. N.F. Mott. Proc. Camb. Philos. Soc. 34, 568-572, 1938. https://doi.org/10.1017/S0305004100020570
75. B.I. Davydov. Fizika 1, 167, 1939.* https://doi.org/10.1136/bmj.1.4073.167
76. J. Bardeen. Phys. Rev. 71(10), 717-727, 1947. https://doi.org/10.1103/PhysRev.71.717
77. F.A. Padovani, R. Stratton. Sol. State Electron. 9(7), 695-707, 1966. https://doi.org/10.1016/00381101(66)90097-9
78. E.H. Rhoderick. Metal−Semiconductor Contacts, Clarendon Press, Oxford, .1978.
79. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.
80. J.C. Bose. US Patent N778440, 1904.
81. G.W. Pickard. US Patent N836531, 1906.
82. W. Shockley. BSTJ 28(3), 435-489, 1949. https://doi.org/10.1002/j.1538-7305.1949.tb03645.x
83. J.R. Arthur. J. Appl. Phys. 39(8), 4032-4037, 1968. https://doi.org/10.1063/1.1656901
84. J.R. Arthur, J.J. LePore. JVST (B) 6(4), 545-548, 1969. https://doi.org/10.1116/1.1315677
85. A.Y. Cho. JVST 8(5), S31-S38, 1971. https://doi.org/10.1116/1.1316387
86. A.Y. Cho. JVST 16(2), 275-284, 1979. https://doi.org/10.1116/1.569926
87. V.V Anashin, G.G. Emelin, B.Z. Katner, V.P. Migal’, E.Ya. Pogodaev, O.P. Pchelyakov, A.V. Rzhanov, S.I. Stenin, A.I. Toropov. Preprint AN SSSR SO Novosibirsk: IFP, no 1, 1985.*
88. A.V. Arkhipenko, Yu.A. Blyumkina, M.A. Lamin, O.P. Pchelyakov, L.V. Sokolov, S.I. Stenin, N.I. Kozlov, A.V. Rzhanov. Poverkhnost’:no 1, 93-96, 1985.*
89. P.S. Kop’ev, N.N. Ledentsov. FTP 22(10), 1729-1742, 1988.*
90. A.L. Aseev, O.P. Pchelyakov, A.I. Toropov. Izv. Vuzov. Fizika no 6, 21-26, 2003.*
91. L. Esaki, L.L. Chang. C.R.C. Orit.-Rev. Solid State Sci. 6(2), 195-208, 1976. https://doi.org/10.1080/10408437608243555
92. S.F. Luy, A. Gasel, W. Behr, E. Kasper. IEEE Trans. Electron. Dev. 34(5), 1084-1089, 1987. https://doi.org/10.1109/T-ED.1987.23049
93. K. Ploog, A. Fischer. JVST (B) 16(2), 290-294, 1979. https://doi.org/10.1Chapter 1
1. E.V. Kulikova, I.V. Ryzhikov, Yu.I. Sidorov. ET Ser. 2, no 3, 3-27, 1971.*https://doi.org/10.1002/chin.197127173
2. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.
3. E.H. Rhoderick. Metal−Semiconductor Contacts, Clarendon Press, Oxford, 1978.
4. V.I. Strikha. Contact Phenomena in Semiconductors, Vyscha Shkola, Kiev, 1982.*
5. M. Shur. GaAs Devices and Circuits, Plenum Press, New York and London, 1987. https://doi.org/10.1007/978-1-4899-1989-2
6. F.A. Padovani, R. Stratton. Sol. State Electron. 9(7), 695-707, 1966. https://doi.org/10.1016/0038 1101(66)90097-9
7. A.Y.C. Yu. Sol. State Electron. 13(2), 239-247, 1970. https://doi.org/10.1016/0038-1101(70)90056-0
8. C.Y. Chang, Y.K. Fang, S.M. Sze. Sol. State Electron. 14(7), 529-645, 1971. https://doi.org/10.1016/0038-1101(71)90129-8
9. E.B. Kaganovich, S.V. Svechnikov. In: The Republican Interagency Collection of Scientific Papers, no 21, 1-11, Naukova Dumka, Kiev, 1991.*
10. R.H. Cox, H. Strack. Sol. State Electron. 10(12), 1213-1218, 1967. https://doi.org/10.1016/0038-1101(67)90063-9
11. R.D. Brooks, Н.G. Mathes. BSTJ 50, 775-784, 1971. https://doi.org/10.1002/j.1538-7305.1971.tb01882.x
12. H. Morkoç. Handbook of Nitride Semiconductors and Devices, vol. 2. Electronic and Optical Processes in Nitrides, Wiley-VCH, 2008. https://doi.org/10.1002/9783527628414
13. K.C. Saraswat. http://www.stanford.edu/class/ee311/NOTES/Ohmic_Contacts.pdf
14. M. Lijadi, F. Pardo, N. Bardou, J-L. Pelouard. Sol. State Electron. 49, 1655-1661, 2005. https://doi.org/10.1016/j.sse.2005.06.023
15. G.K. Reeves. Sol. State Electron. 23(5), 487-490, 1980. https://doi.org/10.1016/0038-1101(80)90086-6
16. A.N. Andreev, M.G. Rastegaeva, V.P. Rastegaev, S.A. Reshanov. FTP 32(7), 832-838, 1998.* https://doi.org/10.1134/1.1187496
17. N. Stavitski, M.J.H. van Dal, J.H. Klootwijk, R.A.M. Wolters, A.Y. Kovalgin, J. Schmitz In: Proc. 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands, 436-438.
18. E. Kuphal. Sol. State Electron. 24(1), 69-78, 1981. https://doi.org/10.1016/0038-1101(81)90214-8
19. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov SQO 10(4), 1-8, 2007.
20. W. Götz, N.M. Johnson, C. Chen, H. Lin, C. Kuo, W. Imler. Appl. Phys. Lett. 68(22), 3144- 3146, 1996. https://doi.org/10.1063/1.115805
21. A.P. Vetrov. Candidate of Phys.-Math. Sci. Thesis, Kiev University, 1989.*
22. V.I. Shashkin, A.V. Murel. FTP 42(4), 500-502, 2008.* https://doi.org/10.1134/S1063782608040210
23. V.G. Bozhkov, S.E. Zaitsev. Izv. Vuzov. Fizika 48(10), 77-85, 2005.* https://doi.org/10.1007/s11182-006-0029-5
24. P.A. Ivanov, L.S. Kostina, A.S. Potapov, T.P. Samsonova, E.I. Belyakova, T.S. Argunova, I.V. Grekhov. FTP 41(8), 941-944, 2007.* https://doi.org/10.1134/S1063782607080106
25. V.A. Pilipenko, V.N. Ponomar, V.A. Gorushko, A.A. Soloninko. Physical Measurements in Microelectronics, BGU, Minsk, 2003.*
26. V.A. Emelyanov, V.V. Baranov, L.D. Buyko, T.V. Petlitskaya. The Methods of Parameter Control for Solid-State VLSI Structures, Bestprint, Minsk, 1998.*
27. V.A. Emelyanov, V.V. Baranov, T.V. Petlitskaya, L.D. Buyko, N.K. Kasinskii. The Hardware for Control of Solid-State Structure Parameters in VLSI Manufacturing, Bestprint, Minsk, 1997.*
28. N.A. Charykov, M.L. Belousov, M.V. Perevozchikov, Yu.V. Oreshnikov, V.N. Danilin, T.A. Zhukova. In: Abstracts of the All-Russia Conf. “Gallium, Indium and Aluminum Nitrides – Structures and Devices”, Moscow, 1-2 Nov. 2001, 17.*
29. V.T. Kremen, PTE no 5, 158-160, 1998.* https://doi.org/10.1016/S1353-1131(98)90051-7
30. R.V. Konakova, O.E. Rengevich, A.M. Kurakin, Ya.Ya. Kudryk. SQO 5(4), 449-452, 2002.116/1.569929
Chapter 2
1. L.J. Brillson. Surf. Sci. Reports 2, 123-326, 1982. https://doi.org/10.1016/0167-5729(82)90001-2
2. I. Lindau, T. Kendelewicz, N. Hewman, R.S. List, M.D. Williams, W.E. Spicer. Surf. Sci. 162(1-3), 591-604, 1985. https://doi.org/10.1016/0039-6028(85)90953-7
3. Physics and Chemistry of III−V Compound Semiconductor Interfaces (ed. C.W. Wilmsen), Plenum Press, New-York, 1985.
4. L.J. Brillson. J. Phys. Chem. Solids 44(8), 703-733, 1983. https://doi.org/10.1016/0022-3697(83)90002-1
5. G. Platero, J.A. Verges, F. Flores. Surf. Sci. 168(1-3), 100-104, 1986. https://doi.org/10.1016/0039-6028(86)90839-3
6. W. Mönch. Rep. Progr. Phys. no 53, 221-278, 1990. https://doi.org/10.1088/0034-4885/53/3/001
7. N.L. Dmitruk, O.Yu. Maeva. OPT no 17, 29-40, 1990.*
8. F Bechstedt, R. Enderlein. Semiconductor Surfaces and Interfaces. Their Atomic and Electronic Structures, Akademie-Verlag, Berlin, 1988.
9. Тhin Films. Interdiffusion and Reactions (eds. J.M. Poate, K.N. Tu, W. Mayer), Wiley. 1978.
10. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal−Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*
11. Modern Problems of Physical Chemistry of Semiconductor Surface (eds. A.V. Rzhanov, S.M. Repinskii), Nauka SO, Novosibirsk, 1988.*
12. R.L. Van Melrhaegne. In: Frontiers in Nanoscale Science of Micron/Submicron Devices (eds. A.-P. Jauho, E.V. Buzaneva), 315-328, NATO ASI Series, Ser. E: Appl. Sci., Kiev, Ukraine, Aug. 16-26, 1995.
13. V.G. Bozhkov, K.V. Soldatenko, A.A. Yatis. In: Semiconductor Schottky-Barrier Devices (ed. V.I. Strikha), 48-52, Naukova Dumka, Kiev, 1979.*
14. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, I.V. Prokopenko. Interactions Between Phases and Degradation Mechanisms in the metal−InP and metal−GaAs Structures, Nauchnaya Kniga, Kiev, 1999.*
15. J. Breza, E.F. Venger, R.V. Konakova, V.G. Lyapin, V.V. Milenin, V.A. Statov, Yu.A. Tkhorik. Poverkhnost’ no 5, 110-125, 1998.*
16. S.P. Мurarka. Silicides for VLSI Application, Academic Press. New York – London. 1983.
17. VLSI Electronics: Microstructure Science (eds. N.G. Einspruch, W.R. Wisseman), vol. 11 (GaAs Microelectronics), Academic Press, Orlando et al., 1985.
18. A. Hiraki. Surf. Sci.Reports 3(7), 357-412, 1983. https://doi.org/10.1016/0167-5729(84)90003-7
19. A.P. Vyatkin, N.K. Maksimova. In: New Materials in Semiconductor Engineering, 32-48, Nauka SO, Novosibirsk, 1990.*
20. B.A. Nesterenko, O.V. Snitko. Physical Properties of Atomically-Clean Semiconductor Surface, Naukova Dumka, Kiev, 1983.*
21. V.G. Litovchenko. The Foundations of Physics of Semiconductor Layered Systems, Naukova Dumka, Kiev, 1983.*
22. F.G. Allen, G.W. Gobeli. Phys. Rev. 127(1), 150-158, 1962. https://doi.org/10.1103/PhysRev.127.150
23. B.A. Nesterenko. Appl. Surf. Sci. 33-34, 21-30, 1988. https://doi.org/10.1016/0169-4332(88)90283-8
24. V.A. Grazhulis. Surf. Sci. 168(1-3), 16-27, 1986. https://doi.org/10.1016/0039-6028(86)90831-9
25. W. Mönch. Surf. Sci. 299-300(1), 928-944, 1994. https://doi.org/10.1016/0039-6028(94)90707-2
26. B.A. Nesterenko, A.V. Brovii. Poverkhnost’ no 12, 65-71, 1987.*
27. J.G. Clabes, G.W. Rubloff, B. Reihl, R.J. Purtell, P.S. Ho, A. Zartner, F.J. Himpsel, D.E. Eastman. JVST 20(3), 684-687, 1982. https://doi.org/10.1116/1.571628
28. A.D. Katnani, N.G. Stoffel, H.S. Edelman, G. Margaritondo. JVST 19(3), 290-293, 1981. https://doi.org/10.1116/1.571051
29. S. Ciraci, I.P. Batra. Phys. Rev. Lett. 56(8), 877-880, 1986. https://doi.org/10.1103/PhysRevLett.56.877
30. N.L. Dmitruk. Izv. Vuzov. Fizika no 1, 38-51, 1980.*
31. A. Amith, P. Mark. JVST 15, 1344-1352, 1978. https://doi.org/10.1116/1.569763
32. J.M. Palau, E. Testemale, A. Ismail, L. Lassabatere. Sol. State Electron. 25(4), 285-294, 1982. https://doi.org/10.1016/0038-1101(82)90137-X
33. T. Yoshiie, C.L. Bauer, A.G. Milnes. Thin Solid Films 111(2), 149-166, 1984. https://doi.org/10.1016/0040-6090(84)90483-8
34. O.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.V. Milenin, A.A. Naumovets, B.A. Nesterenko. Poverkhnost’ no 6, 61-68, 1994.*
35. S. Chang, L.S. Brillson, D.F. Rioux, Y.J. Kime, P.D. Kirchner, G.D. Pettit, J.M. Woodall. JVST B 8(4), 1008-1013, 1990..
36. A.A. Aristarkhova, S.S. Volkov, V.V. Trukhin, G.N. Shuppe. Poverkhnost’ no 11, 107-113, 1990.*
37. S.P. Kowalzyk, J.R. Waldrop, R.W. Grant. JVST 19(3), 611-616, 1981. https://doi.org/10.1116/1.571140
38. J.M. Woodall, J.L. Freeouf. JVST 19(3), 794-798, 1981. https://doi.org/10.1116/1.571150
39. V.A. Batenkov, L.V. Fomina. In: Proc. 8th Russian Conf. “Gallium Arsenide and III−V Semiconductor Compounds” GaAs-2002, 341-343, TGU, Tomsk, 2002.*
40. V.I. Strikha, E.V. Buzaneva, I.A. Radzievskii. Schottky-Barrier Semiconductor Devices. Sovetskoe Radio, Moscow, 1974.*
41. B.A. Nesterenko, V.G. Lyapin. Phase Transitions at Free Faces and Boundaries Between Phases in Semiconductors, Naukova Dumka, Kiev, 1990.
42. Sebenne C.A. In: Proc. 17th Intern. Сonf. on the Physics of Semiconductors (San Francisco, Aug. 6-10, 1984, eds. J.D. Chadi, W.A. Harrison), 143-148, Springer-Verlag, New York, 1985.
43. B.A. Nesterenko, O.A. Stadnik. Surf. Sci. 331-333(2), 1262-1266, 1995.. https://doi.org/10.1016/0039-6028(95)00315-0
44. N.V. Rozhanskii, A.T. Akimov. Poverkhnost’ no 12, 57-68, 1990.*
45. Yu.D. Tretyakov. Solid-Phase Reactions, Khimiya, Moscow, 1978.*
46. K. Okuno, T. Ito, M. Iwami, A. Hiraki. Sol. State Commun. 34(6), 493-497, 1980.. https://doi.org/10.1016/0038-1098(80)90659-6
47. G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer. Phys. Rev B 25(6), 3627-3636, 1982. https://doi.org/10.1103/PhysRevB.25.3627
48. A. Franciosi, D.J. Peterman, J.H. Weaver, J.L. Moruzzi. Phys. Rev.B 25(8), 4981-4993, 1982. https://doi.org/10.1103/PhysRevB.25.4981
49. V.G. Lifshits. Electron Spectroscopy and Atomic Processes at Silicon Surface, Nauka, Moscow, 1985.*
50. N.N. Berchenko, N.R. Aigina. ZET no 10, 3-81, 1986.*
51. G. Rossi. Surf. Sci. Reports 7(1), 1-101, 1987. https://doi.org/10.1016/0167-5729(87)90005-7
52. R.A. Butera, C.A. Hollingsworth. Phys. Rev. 37(18), 10487-10495, 1988. https://doi.org/10.1103/PhysRevB.37.10487
53. N.I. Plyusnin, A.P. Milenin. Poverkhnost’ no 3, 36-45, 1997.*
54. R.T. Tung. Mater. Sci. and Eng. R: Reports 35(1), 1-138, 2001. https://doi.org/10.1016/S0927-796X(01)00037-7
55. G. Ottaviani. JVST 18(3), 924-928, 1981. https://doi.org/10.1116/1.570995
56. M. Ronay. Appl. Phys. Lett. 42(7), .577-580, 1983. https://doi.org/10.1063/1.94007
57. G. Ottaviani, K.N. Tu, J.W. Mayer. Phys. Rev. B 24(6), 3354-3359, 1981. https://doi.org/10.1103/PhysRevB.24.3354
58. K.N. Tu. Appl. Phys. Lett. 24(4), 221- 224, 1975. https://doi.org/10.1246/cl.1975.221
59. V.V. Kononenko. Preprint no 376, IF AN BSSR, Minsk, 1985.*
60. W.Z. Schottky. Z. Phys. 118(9-10), 539-592, 1942. https://doi.org/10.1007/BF01329843
61. J. Bardeen. Phys. Rev. 71(10), 717-727, 1947. https://doi.org/10.1103/PhysRev.71.717
62. V. Heine. Phys. Rev. A 138(6), A1689-A1696, 1965. https://doi.org/10.1103/PhysRev.138.A1689
63. I. Lindau, P.W. Chye, C.M. Garner, P. Pianetta, C.Y. Su, W.E. Spicer. JVST 15(4), 1332-1339, 1978. https://doi.org/10.1116/1.569761
64. Sh.G. Askerov. PZhTF 3(18), 968-970, 1977.* https://doi.org/10.1016/0032-3861(77)90148-3
65. J.L. Freeouf, J.M. Woodall. Appl. Phys. Lett. 39(9), 727-729, 1981. https://doi.org/10.1063/1.92863
66. V.A. Gergel, R.A. Suris. ZhETF 84(2), 719-736, 1983.* https://doi.org/10.1378/chest.84.6.71
67. C. Tejedor, F. Flores, E. Louis. J. Phys. C: Solid State Phys. 110(12), 2163-2177, 977.
67. C. Tejedor, F. Flores, E. Louis. J. Phys. C: Solid State Phys. 110(12), 2163-2177, 977.
68. J.C. Inkson, J. Phys. C: Solid State Phys. 6(8), 1350-1362, 1973. https://doi.org/10.1088/0022-3719/6/8/004
69. J.C. Phillips. Sol. State Commun. 12(9), 861-864, 1973. https://doi.org/10.1016/0038-1098(73)90095-1
70. L.J. Brillson. Phys. Rev. Lett. 40(4), 260-263, 1978. https://doi.org/10.1103/PhysRevLett.40.260
71. Murray S. Daw, D.L. Smith. Phys. Rev. B 20(12), 5150-5156, 1979. https://doi.org/10.1103/PhysRevB.20.5150
72. J.M. Woodall, G.D. Pettit, T.N. Jackson, C. Lanza, K.L. Kavanagh, J.W. Mayer. Phys. Rev. Lett. 51(19), 1783-1786, 1983. https://doi.org/10.1103/PhysRevLett.51.1783
73. R.E. Allen, J.D. Dow. JVST 19(3), 383-387, 1981. https://doi.org/10.1116/1.571068
74. A. Zunger. Phys. Rev. B 24(8), 4372-4391, 1981. https://doi.org/10.1103/PhysRevB.24.4372
75. A. Hiraki, K. Shuto, S. Kim, W. Kamimura, W. Iwami. Appl. Phys. Lett. 31(9), 611-612, 1977. https://doi.org/10.1063/1.89799
76. L.J. Brillson. Phys. Rev. B 18(6), 2431-2446, 1978. https://doi.org/10.1103/PhysRevB.18.2431
77. L.J. Brillson. Surf. Sci. 168(1-3), 260-274, 1986.https://doi.org/10.1016/0039-6028(86)90856-3
78. C.A. Mead. Appl. Phys. Lett. 6(6), 103-104, 1965. https://doi.org/10.1063/1.1754185
79. S.G. Louie, M.L. Сohen. Phys. Rev. B 13(6), 2461-2469, 1976. https://doi.org/10.1103/PhysRevB.13.2461
80. J. Tersoff. JVST B 4(4), 1066-1067, 1986. https://doi.org/10.1116/1.583543
81. W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, I. Lindau. JVST 16(5), 1422-1433, 1979. https://doi.org/10.1116/1.570215
82. R. Van de Walle, R.L. Van Meirhaeghe, W.H. Laflere, F. Cardon. J. Appl. Phys. 74(3), 1885- 1889, 1993. https://doi.org/10.1063/1.354797
83. O.F. Sankey, R.E. Allen, R. Shang-Fen, J.D. Dow. JVST B 3(4), 1162-1166, 1985.
84. I.B. Ermolovich, R.V. Konakova, V.V. Milenin, A.N. Primenko, I.V. Prokopenko. FTP 31(4), 503-508, 1997.* https://doi.org/10.1134/1.1187177
85. S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappell, G.D. Pettit. Appl. Phys. Lett. 48(7), 475-477, 1986. https://doi.org/10.1063/1.96535
86. A.P. Vyatkin, N.K. Maksimova. Izv. Vuzov. Fizika no 10, 96-108, 1983.*
87. H. Hasegawa, T. Sawada. Thin Solid Films 103(1), 119-140, 1983. https://doi.org/10.1016/0040-6090(83)90430-3
88. H. Hasegawa, H. Ohno, T. Sawada. Jap. J. Appl. Phys. 25(4), L265-L268, 1986. https://doi.org/10.1143/JJAP.25.L265
89. H. Hasegawa, H. Ohno. JVST 34(4), 1130-1138, 1986. https://doi.org/10.1103/PhysRevB.34.1130
90. S.D. Mukherjee, D.V. Morgan, C.J. Palmstron, J.G. Smith. JVST 17(5), 904-910, 1980. https://doi.org/10.1116/1.570614
91. R. Pretorius, J.M. Harris, M.-A. Nicolet. Sol. State Electron. 21(4), 667-675, 1978. https://doi.org/10.1016/0038-1101(78)90335-0
92. V.V. Milenin, V.G. Lyapin, A.A. Naumovets. ZhTF 65(8), 90-97, 1995.*
93. A.P. Vyatkin, V.I. Kravtson, L.M. Krasil’nikova, N.K. Maksimova, P.V. Panasenko, A.G. Pozdnyakov, V.I. Filatov. EP no 3, 44-46, 1990.*
94. T. Lalinsky, D. Greguševa, Ž. Morozova, J. Breza, P. Vogrinčič. Appl. Phys. Lett. 64(14), 1818-1820, 1994. https://doi.org/10.1063/1.111988
95. M.-A. Nikolet. Thin Solid Films 52(3), 415-443, 1978. https://doi.org/10.1016/0040-6090(78)90184-0
96. M.-A. Nicolet, M. Bartur. JVST 19(3), 786-793, 1981. https://doi.org/10.1116/1.571149
97. D.V. Morgan, H. Thomas, W.T. Anderson, P. Thompson, A. Christou, D.J. Diskett. Phys. Stat. Sol. (a) 110(2), 531-536, 1988. https://doi.org/10.1002/pssa.2211100226
98. L.C. Zhang, S.R. Cheng, C.L. Liand, H.W. Cheung. Appl. Phys. Lett. 50(8), 445-447, 1987.
https://doi.org/10.1063/1.98169
99. Kin Man Yu., J.M. Jaklevic, E.E. Haller, S.K. Cheung, P.S. Kwok. J. Appl. Phys. 64(3), 1284- 1291, 1988. https://doi.org/10.1063/1.341847
100. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, V.A. Pilipenko. Interstitial Phases in the Technology of Semiconductor Devices and VLSI, NTK “Institute for Single Crystals”, Kharkov, 2008.*
101. L.A. Dvorina. In: Refractory Compounds in Microelectronics, 4-14, IPM, Kiev, 1996.*
102. L.A. Seidman. OET Ser. 2, no 6(1366), 1988.*
103. N.K. Maksimova, V.M. Kalygina, V.P. Voronkov, A.P. Vyatkin. Izv. Vuzov. Fizika no 10, 52-62,
104. M. Guziewicz, A. Piotrowska, E. Kaminska, K. Goldszewska, A. Turos, E. Mizera, A. Winiarski, J. Szade. Sol. State Electron. 43(6), 1055-1061, 1999. https://doi.org/10.1016/S0038-1101(99)00024-6
105. Wan-rong Zhang, Zhi-guo Li, Fu-Chen Mu, Ying-Hua Sun, Yao-hai Cheng, Jian-xin Chen, Guang-Di Shen. Sol. State Electron. 45(7), 1183-1187, 2001.
106. H.C. Chen, B.H. Tseng, M.P. Houng, Y.H. Wang. Thin Solid Films 445(1), 112-117, 2003. https://doi.org/10.1016/S0040-6090(03)01237-9
107. A. Kuchuk, E. Kaminska, A. Piotrovska, K. Golazewska, E. Dynowska, O.S. Lytvyn, L. Nowicki, R. Ratajczak. Thin Solid Films 459(1-2), 292-296, 2004. https://doi.org/10.1016/j.tsf.2003.12.137
108. D.C. Houghton. Thin Films and Interfaces 25, 149-156, 1983.
109. Mayumi Takeyama, Atsushi Noya, Touko Sase, Akira Ohta. JVST B 14(2), 674-678, 1996.
110. A.V. Kuchuk. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP, Kiev, 2006.*
110. A.V. Kuchuk. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP, Kiev, 2006.*
111. N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, I.N. Arsent’ev, A.V. Bobyl, P.N. Brunkov, I.S. Tarasov, А.А. Tonkikh, V.P. Ulin, М. Ustinov, G.E. Tsirlin. FTP 40(6), 753-757, 2006.* https://doi.org/10.1134/S1063782606060200
112. M. Guziewicz. Ph. D. Thesis. Proc. ITE no 1-3, 1-70, 2001 (in Polish).
113. A.V. Kuchuk, V.P. Kladko, V.F. Machulin, A. Piotrovska, E. Kaminska, K. Golaszewska, R. Ratajczak, R. Minikayev. Rev. Adv. Mater. Sci. 8(1), 22-26, 2004.
114. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin. SQO 3(3), 359-370, 2000.
115. V.V. Milenin, R.V. Konakova, V.N. Ivanov, G.K. Beketov, V.I. Poludin, I.B. Ermolovich. ZhTF 70(11), 80-85, 2000.*
116. E.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, V.N. Ivanov, D.I. Voitsikhovskyi. FTP 33(8), 948-953, 1999.* https://doi.org/10.1134/1.1187800
Chapter 3
1. G.V. Milenin, A.V. Bakuntsev. Tekhnika Sredstv Svyazi, Ser. Tekhnika Radioveschatel’nogo Priema i Akustiki, no 2, 45-51, 1989.*
2. A.V. Bakuntsev, G.V. Milenin. Dielektriki i Poluprovodniki, no 33, 88-94, 1988.*
3. L.G. Dubitskii. ET Ser. 8, no 7(85), 11-34, 1980.*
4. V.L. Vorobiev. Thermodynamic Foundations of Diagnostics and Reliability of Microelectronic Facilities, Nauka, Moscow, 1989.*
5. R. Haase, Thermodynamics of Irreversible Processes, Dover Publications, New York, 1990.
6. А.А. Predvoditelev, N.A. Tyapunina, G.I. Zinenkova, G.V. Bushueva. Physics of Crystals with Defects, MGU, Moscow, 1986.*
7. Physical Basis of IC Reliability (ed. Yu.G. Miller), Sovetskoe Radio, Moscow, 1976.*
8. E.I. Efimov, I.G. Kalman, V.I. Martynov. Reliability of Solid ICs, Izd. Standartov, Moscow, 1979.*
9. А.А. Chernyshev. The Foundations of Reliability of Semiconductor Devices and ICs, Radio i Svyaz’, Moscow, 1988.*
10. V.I. Fistul. Decomposition of Supersaturated Semiconductor Solid Solutions, Metallurgiya, Moscow, 1977.*
11. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal−Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*
12. F.S. Shishiyanu. Diffusion and Degradation in Semiconductor Materials and Devices, Shtiintsa, Kishinev, 1978.*
13. R.V. Konakova, P. Kordoš, Yu.A. Tkhorik, V.I. Faynberg, F. Štofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986.
14. Yu.A. Tkhorik, L.S. Khazan. Plastic Deformation and Misfit Dislocations in Heteroepitaxial Systems, Naukova Dumka, Kiev, 1983.*
15. K.A. Baliev, V.N. Dyagilev, V.I. Lebedev, A.V. Lubashevskii. Micropower ICs, Sovetskoe Radio, Moscow, 1975.*
16. Silicon Nitride in Electronics (ed. A.V. Rzhanov), Nauka, Novosibirsk, 1982.*
17. I.M. Melamedov. Physical Basis of Reliability, Energiya, Leningrad, 1970.*
18. V.M. Bardin. Reliability of Semiconductor Power Devices, Energiya, Moscow, 1978.*
19. O.A. Kuznetsov, A.I. Pogalov, V.S. Sergeev. Strength of the Elements of Microelectronic Equipment, Radio i Svyaz’, Moscow, 1990.*
20. L.G. Dubitskii. Forerunners of Failures in the Electronic Products, Radio i Svyaz’, Moscow, 1989.*
21. V.N. Deynego, G.V. Milenin. Electronnoe Modelirovanie 16(2), 55-57, 1994.* https://doi.org/10.2307/3378583
22. G.V. Milenin. Electronnoe Modelirovanie 18(1), 59-61, 1996.*
23. G. Nicolis, I. Prigogine. Self-Organization in Nonequilibrium Systems: From Dissipative Structures to Order through Fluctuations, Wiley, New York, 1977.
24. G. Nicolis, I. Prigogine. Exploring Complexity, Freeman and Co, New York, 1989.
25. V.V. Bolotin. The Methods of Probability Theory and Reliability Theory in Analysis of Structure, Stroyizdat, Moscow, 1982.*
26. J.M.T. Thompson. Instabilities and Catastrophes in Science and Engineering, Wiley, New York, 1982.
27. V.Z. Parton. Fracture Mechanics: From Theory to Practice, Gordon and Breach, Philadelphia, 1992.
28. D. Broek. Elementary Engineering Fracture Mechanics, Martinus Nijhoff Publishers, Boston−The Hague−Dordrecht−Lancaster, 1982. https://doi.org/10.1007/978-94-011-9055-8
29. J.A. Collins. Failure of Materials in Mechanical Design: Analysis, Prediction, Prevention, 2nd Edition, Wiley, New York, 1993.
30. J.F. Knott. Fundamentals of Fracture Mechanics, John Wiley – Halsted Press, New York, 1973.
31. Yu.A. Kontsevoi, Yu.M. Litvinov, E.A. Fattakhov. Plasticity and Strength of Semiconductor Materials and Structures, Radio i Svyaz’, Moscow, 1982.*
32. V.S. Zolotarevskii. Mechanical Properties of Metals, Metallurgiya, Moscow, 1983.*
33. V.R. Regel, A.I. Slutsker, E.E. E.Tomashevskii. Kinetic Nature of Strength of Solids, Nauka, Moscow, 1974.*
34. G.M. Bartenev, Yu.V. Zelenev. Physics and Mechanics of Polymers, Vysshaya Shkola, Moscow, 1983.*
35. I.M. Dubrovskii, B.V. Egorov, K.P. Ryaboshapka. Physics Handbook, Naukova Dumka, Kiev, 1986.*
36. Nonlinear Effects and Kinetics of Fracture (Subject Collection of Scientific Transactions), Leningrad, 1988.*
37. G.I. Skanavi. Physics of Dielectrics. High Fields Region, GIFML, Moscow, 1958.*
38. V.S. Dmitrievskii. Calculation and Design of Electrical Insulation, Energoizdat, Moscow, 1981.*
39. G.S. Kuchinskii. Partial Discharges in High-Voltage Structures, Energiya, Leningrad, 1979.*
40. V.Ya. Ushakov. Electrical Aging and Resources of Monolithic Polymer Insulation, Energoatomizdat, Moscow, 1988.*
41. А.А. Vorobiev, E.K. Zavadovskaya. Electric Strength of Solid Dielectrics, GIFML, Moscow, 1956.*
42. А.А. Vorobiev, G.A. Vorobiev. Electrical Breakdown and Disruption of Solid Dielectrics, Vysshaya Shkola, Moscow, 1966.*
43. Yu.A. Kontsevoi, S.P. Miroshnikov, R.R. Rezvyi, V.P. Solntseva. ET Ser. 2, no 4(47), 165-177, 1969.*
44. Silicon Planar Transistors (ed. Ya.A. Fedotov), Sovetskoe Radio, Moscow, 1973.*
45. V.I. Nikishin, B.K. Petrov, V.F. Synorov, V.S. Gorokhov, V.V. Bachurin, V.V. Asessorov. Design and Manufacturing Technology for Power Microwave Transistors, Radio i Svyaz’, Moscow, 1989.*
46. V.N. Deynego, G.V. Milenin. Electronnoe Modelirovanie 16(1), 15-18, 1994.*
47. Yu.M. Poplavko. Physics of Dielectrics, Vyscha Shkola, Kiev, 1989.*
48. A.M. Nechaev, V.F. Sinkevich. ET Ser. 2, no 2(161), 45-54, 1983.*
49. A.M. Nechaev, E.A. Rubakha, V.F. Sinkevich. RE 26(8), 1773-1782, 1981.*
50. K.V. Shalimova. Physics of Semiconductors, Energiya, Moscow, 1976.*
51. I.M. Vikulin, V.I. Stafeev. Physics of Semiconductor Devices, Radio i Svyaz’, Moscow, 1990.*
52. V.V. Pasynkov, L.K. Chirkin, A.D. Shinkov. Semiconductor Devices, Vysshaya Shkola, Moscow, 1981.*
Chapter 4
1. H. Egawa. IEEE Trans. Electron Devices ED-13(11), 754-758, 1966. https://doi.org/10.1109/T-ED.1966.15838
2. H.C. Bowers. IEEE Trans. Electron Devices ED-15(6), 343-350, 1968. https://doi.org/10.1109/T-ED.1968.16189
3. M.W. Muller, H.G. Guckel. IEEE Trans. Electron Devices 15, 560, 1968. https://doi.org/10.1109/T-ED.1968.16403
4. I.V. Grekhov, Ye.N. Serezhkin. Avalanche Breakdown of the p-n Junction in Semiconductors. Energiya, Leningrad, 1980*.
5. A.S. Tager, V.M. Val’d-Perlov. Avalanche Diodes and Their Application in the UHF Technique, Sovetskoe Radio, Moscow, 1968*.
6. R.V. Konakova, Yu.S. Melnikova, E.V. Mozdor, V.I. Faynberg. FTP 22(10), 1754-1758, 1988.*
7. R.V. Konakova, Yu.S. Melnikova, E.V. Mozdor, V.I. Faynberg. Phys. Stat. Sol. (a) 113, 215- 221, 1989. https://doi.org/10.1002/pssa.2211130126
8. G.E. Stilman, V.M. Robbins, K. Hess. Physica B134, 241, 1980. https://doi.org/10.1016/0378-4363(85)90348-1
9. B.T. Dai, C.V. Chasg. J. Appl. Phys. 42, 5198, 1971. https://doi.org/10.1063/1.1659922
10. R. Van Overstraeten, H. De Man. Sol. State Electron. 13(5), 583-608, 1973. https://doi.org/10.1016/0038-1101(70)90139-5
11. B.I. Boltaks. Diffusion in Semiconductors. Fizmatgiz, Moscow, 1961.*
12. V.I. Faynberg. PTM no 32, 49-53, 1980.* https://doi.org/10.1353/boc.1980.0031
13. S.M. Sze, R.M. Ryder. Proc. IEEE 59, 1140, 1971. https://doi.org/10.1109/PROC.1971.8360
14. R.A. Giblin. Electronics Lett. 4(3), 52-54, 1968. https://doi.org/10.1049/el:19680042
15. M.W. Muller. Appl. Phys. Lett. 12(6), 218-219, 1968. https://doi.org/10.1063/1.1651960
16. M.W. Muller. IEEE Trans. Electron. Devices 15, 510, 1968. https://doi.org/10.1109/T-ED.1968.16413
17. A.W. Garlson. Proc. IEEE 57(3), 351-354, 1969. https://doi.org/10.1109/PROC.1969.6975
18. I.L. Zaizevskii, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. Phys. Stat. Sol. 53(2), K153- K156, 1972. https://doi.org/10.1002/pssa.2210530246
19. W.J. Ewans, D.I. Scharfetter, R.L. Johnston, R.L. Kev. J. Appl. Phys. 42(2), 799-803, 1971. https://doi.org/10.1063/1.1660096
20. B. Hofflinger. IEEE Trans. Electron. Devices ED-13(1), 151-158, 1966. https://doi.org/10.1109/T-ED.1966.15650
21. J.B. Gunn. In: Progress in Semiconductors 2 (ed. A.F. Grasos), Heywood, London, 1957.
22. T.Ya. Puritis, I.E. Ozolinya, R.Ya. Krike, Ya.P. Murans, Ya.K. Balodis. In: Physics of p-n Junctions, 383-390, Zinatne, Riga, 1966.*.
23. A.W. Garlson. Proc. IEEE 56(7), 1228-1229, 1968. https://doi.org/10.1109/PROC.1968.6533
24. B.K. Petroff. RE 21, 2365, 1976.*
25. A.V. Kardo-Sysoev, E.A. Pasutis, I.G. Tchashnikov. FTP 10, 1486, 1976.*.
26. R.V. Konakova, V.I. Faynberg, M.Yu. Filatov. UFZh 25(9), 1563-1565, 1980.*
27. Yu.R. Nosov. Semiconductor Pulse Diodes, Sovetskoe Radio, Moscow, 1965.*
28. V.K. Aladinski, V.I. Dashin, A.S. Sushik, A.M. Timerbulator. RE 18, 342, 1973.*
29. R.V. Konakova, V.I. Faynberg, M.Yu. Filatov. PTM no 34, 41-42, 1981.*
30. V.I. Faynberg, R.V. Konakova, L.V. Scherbina, N.S. Boltovets. Phys. Stat. Sol. (a) 68, 39-43, 1981. https://doi.org/10.1002/pssa.2210680105
31. R.V. Konakova, P. Kordoš, Yu.A. Tkhorik, V.I. Faynberg, F. Štofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986.*
32. V.I. Faynberg. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis. IP AN UkrSSR, Kiev, 1988.*
33. R.V. Konakova, V.V. Rybalka, L.V. Scherbina, I.L. Zaitsevskii. Sol. State Electron. 27(4), 381- 383, 1984. https://doi.org/10.1016/0038-1101(84)90172-2
34. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*
35. L.V. Scherbina. Author’s Synopsis of the Candidate of Tech. Sci. Thesis. IP AN UkrSSR, Kiev, 1991.*
Chapter 5
1. A.M. Assour, J. Murr, D. Tarangioli. R.C.A. Rev. 31(9), 499-516, 1970.
2. V.F. Afanasovich, V.N. Vasilevskaya, N.S. Boltovets, R.V. Konakova, I.A. Mal’tseva, V.V. Rybalka, L.M. Suvorova, L.А. Khomenko. PTM no 15, 42-44, 1974.*
3. Z.A. Iskander-zadeh, Yu.G. Miller, S.G. Rzaev, E.A. Jafarov, M.R. Akhundov. Izv. AN AzSSR. Ser. Phys.-Tech. and Math. Nauk no 4, 76-83, 1977.*
4. Yu.А. Evseev, I.N. Magden, A.E. Radechko, V.Е. Chelnokov. FTP 4(8), 1432-1436, 1970.*
5. C. Donolato, P.G. Merli, I. Vecchi. J. Electrochem. Soc. 124(3), 473-474, 1977. https://doi.org/10.1149/1.2133330
6. H.F. John. Proc IEEE 55(8), 1249-1271, 1967. https://doi.org/10.1109/PROC.1967.5827
7. W. Shockley. Sol. State Electron. 2(1), 35-67, 1961. https://doi.org/10.1016/0038-1101(61)90054-5
8. V.V. Batavin. FTP 4(4), 760-763, 1970.*
9. L.G. Dubitskii. Forerunners of Failures in the Electronic Products, Radio i Svyaz’, Moscow, 1989.*
10. W. Shockley. Czech. J. Phys. B11, 81-121, 1961. https://doi.org/10.1007/BF01688613
11. C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek. Proc. IEEE 62(2), 149-168, 1974. https://doi.org/10.1109/PROC.1974.9406
12. N.V. Bogach, V.A. Gusev, P.G. Litovchenko. PTM no 34, 3-20, 1981.*
13. J.E. Lawrence. Solid State Technology 19(8), 50-54, 1975.
14. S. Prussin. Solid State Technology 19(8), 58- 60, 1975.
15. C.J. Varker. Solid State Technology 19(8), 60-63, 1975.
16. V.M. Kiriyanova, A.N. Makovii, M.I. Shevelev. In: Problems of Microelectronics, 85-90, Naukova Dumka, Kiev, 1971.*
17. J. Kowar, A. Zielinski. In: Proc. 6th Colloquium on Microwave Communication.-Budapest, 1978. 1. – P. II-3/181 – II-3/186.
18. V.S. Andreev. Elektrosvyaz’ no 11, 38-48, 1974.* https://doi.org/10.1002/j.2161-1920.1974.tb00329.x
19. P.I. Baransky, V.P. Klochkov, I.V. Potykevich. Semiconductor Electronics: A Handbook. Naukova Dumka, Kiev, 1975.*
20. O. Madelung. Physics of III−V Compounds. John Wiley and Sons, Inc., New York−London−Sydney, 1964.
21. S.S. Strel’chenko, V.V. Lebedev. III−V Compounds: A Handbook. Metallurgiya, Moscow, 1984.*
22. L. Pauling. General Chemistry, Freeman, San Francisco, 1970.
23. K.V. Ravy. Defects and Impurities in Semiconducting Silicon, Wiley, New York, 1981.
24. M.G. Milvidskii, V.B. Osvenskii. Structural Defects in Epitaxial Layers of Semiconductors, Metallurgiya, Moscow, 1985.*
25. Yu.A. Kontsevoi, Yu.M. Litvinov, E.A. Fattakhov. Plasticity and Strength of Semiconductor Materials and Structures, Radio i Svyaz’, Moscow, 1982.*
26. M.I. Gorlov, V.A. Emelyanov, A.V. Strogonov. Gerontology of Silicon ICs, Nauka, Moscow, 2004.*
27. N.S. Boltovets, V.N. Vasilevskaya, L.I. Datsenko, R.V. Konakova, E.N. Kislovskii, L.M. Suvorova. In: Structure Defects in Semiconductors, 149-152, IFP SO AN SSSR, Novosibirsk, 1973.*
28. N.S. Boltovets, V.N. Vasilevskaya, R.V. Konakova, L.M. Suvorova. PTM no 15, 42-45, 1973.*
29. D.I. Rose. Phys. Rev. 105(2), 413-418, 1957. https://doi.org/10.1103/PhysRev.105.413
30. S.Yu. Buslaev, Yu.S. Kleinfeld, V.F. Sinkevich. ET Ser. 2 no 5, 76-84, 1984.*
31. A.L. Polyakova. Deformation of Semiconductors and Semiconductor Devices, Energiya, Moscow, 1979.*
32. I.N. Magden, V.A. Safonov, B.L. Meiler. ET Ser. 2 no 4 (114), 42-47, 1977.*
33. R. Stickler, I.W. Faust. Electrochem. Techn. 4(1), 70-71, 1966.
34. L.V. Scherbina. Author’s Synopsis of the Candidate of Tech. Sci. Thesis. IP AN UkrSSR, Kiev, 1991.*
35. A.M. Svetlichnyi, V.G. Klindukhov. FTP 14(11), 2113-2116, 1980.*
36. H. Kressel. R.C.A. Rev. 28(2), 175-207 1967. https://doi.org/10.2307/2105279
37. V.I. Grekhov, Yu.N. Serezhkin. Avalanche Breakdown of p-n Junction in Semiconductors, Energiya, Leningrad, 1980.*
38. V.A. Marasanov, Yu.I. Pashintsev. FTP 1(8), 1214-1217, 1967.*
39. G.S. Agalarzadeh, A.I. Petrin, С.О. Izidinov. Fundamentals of Design and Processing Technology for p-n Junction Surface, Sovetskoe Radio, Moscow, 1978.*
40. A.G. Milnes. Deep Impurities in Semiconductors, Wiley-Interscience, New York, 1973.
41. A. Coetzberger, W. Shockley. J. Appl. Phys. 31(10), 1821-1824, 1960. https://doi.org/10.1063/1.1735455
42. I.N. Magden. ET Ser. 2 no 2(94), 88-90, 1975.*
43. A.S. Tager, V.M. Val’d-Perlov. Avalanche Diodes and Their Application in the UHF Technique. Sovetskoe Radio, Moscow, 1968.*
44. T.Ya. Puritis, I.E. Ozolinya, R.Ya. Krike, Ya.P. Murans, Ya.K. Balodis. In: Physics of p-n Junctions, 383-390, Zinatne, Riga, 1966.*
45. V.V. Batavin, G.V. Popova, L.A. Batavina. FTT 8(8), 2502-2504, 1966.*
46. J.E. Carroll. Hot Electron Microwave Generators. Edward Arnold Publ., London, 1970.
47. R.V. Konakova, P. Kordoš, Yu.A. Tkhorik, V.I. Faynberg, F. Štofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986*.
48. Yu.A. Evseev. Semiconductor Devices for Power High-Voltage Converter Installations, Energiya, Moscow, 1978.*
49. V.Е. Chelnokov, Yu.А. Evseev. Physical Basis for Operation of Power Semiconductor Devices, Energiya, Moscow, 1973.*
50. T.W. Coolns. Proc. IEEE 57(3), 351-354, 1969. https://doi.org/10.1109/PROC.1969.6975
51. R.V. Konakova, N.A. Prima, E.A. Soloviev. In: Proc. 8th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 1, 392-394, Veber, 1998.*
52. N.A. Prima, E.A. Soloviev, N.S. Boltovets. In: Proc. 9th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 87-88, Veber, 1999.*
53. N.S. Boltovets, V.V. Basanets, A.M. Kurakin, E.F. Venger, R.V. Konakova, V.V. Milenin, E.A. Soloviev. In: Proc. 10th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 139-140, Veber, 2000.*
54. A.E. Belyaev, R.V. Konakova, V.V. Milenin, E.A. Soloviev, D.I. Voitsikhovskyi, N.S. Boltovets, V.V. Basanets, V.A. Krivutsa, V.F. Mitin. Rom. J. Inform. Sci. and Technol. 3(1), 5-15, 2000.
55. B.S. Kerner, V.V. Osipov. Autosolitons. Localized Highly Nonequilibrium Regions in the Uniform Dissipative Systems, Nauka, Moscow, 1991.*
56. V.V. Gafiychuk, B.I. Datsko, B.S. Kerner, V.V. Osipov. FTP 24(4), 724-730, 1990.*
57. V.A. Vaschenko, B.S. Kerner, V.V. Osipov, V.F. Sinkevich. FTP 24(10), 1705-1707, 1990.*
58. V.V. Gafiychuk, B.I. Datsko, B.S. Kerner, V.V. Osipov. FTP 24, 1282-1290, 1990.*
59. Physical Quantities: A Handbook (eds. I.S. Grigoriev, E.Z. Meylikhov), Energoatomizdat, Moscow, 1991.*
60. Yu.K. Pozhela. Plasma and Current Instabilities in Semiconductors, Nauka, Moscow, 1977.*
61. H.A. Shafft. Proc. IEEE 55, 1272, 1967. https://doi.org/10.1109/PROC.1967.5828
62. H. Melchior, M.J.O. Strutt. Proc. IEEE 52(4), 439-440, 1964 https://doi.org/10.1109/PROC.1964.2971
63. T.Ya. Puritis, E.V. Pentyush, E.A. Fonav. In: Extension of Operating Temperature Range for Semiconductor Devices, 220-228, Vyscha Shkola, Kiev, 1975.*
64. R.B. Bendere, R.P. Kalnynya, T.Ya. Puritis. Izv. AN LatvSSR. Ser. Fiz. Techn. no 3, 16-21, 1979.*
65. A.C. English, H.M. Power. Proc. IEEE ED-13, 500-501, 1966.
66. V.V. Yudin. ET Ser. 2 no 5, 77-86, 1966.* https://doi.org/10.1177/007327536600500104
67. M.G. Milvidskii, V.B. Osvenskii. Structural Defects in Semiconductor Single Crystals, Metallurgiya, Moscow, 1984.*
68. L.D. Landau, E.M. Lifshits. Theory of Elasticity, Pergamon Press, Oxford, 1986.
69. A. Dardys, J. Kundrotas. Handbook on Physical Properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers, Vilnius, 1994.
70. А.К. Shukhostanov. IMPATT Diodes. Physics. Technology. Application, Radio i Svyaz’, Moscow, 1997.*
71. V.D. Nazarenko, V.I. Tikhonyuk, E.I. Scheglov. ET Ser. 3 no 2 (62), 113-115, 1976.*
72. I.А. Velichkovskii. OET Ser. 1 no 17 (587), 1978.*
73. P. Staecker, W.T. Lindley, R.A. Murphy, G.P. Donnelly. In: 12th Annual Proc. Reliability Physics, 1974. Las Vegas, Nevada, 293-297, N.Y.IEEE Edit. Dept., 1974.
74. K.R. Gleason, E.D. Cohen, M.L. Bark. IEEE Trans. Parts. Hybrids and Packag. PHP-13(4), 344-348, 1977. https://doi.org/10.1109/TPHP.1977.1135220
75. H. Goronkin. Sol. State Electron. 18(10), 891-893, 1975. https://doi.org/10.1016/0038-1101(75)90016-7
76. R.C. Pittetti. In: 10th Annual Proc. Reliability Physics, 1972. Las Vegas, Nevada, 171-174, N.Y., 1972.
77. S.D. Mukherjee, D.V. Morgan, M.J. Hawes. J. Electrochem. Soc. 126(6), 1047-1053, 1979. https://doi.org/10.1149/1.2129172
78. T.A. Midford, R.L. Bernick. IEEE Trans. Microwave Theory and Techn. MTT-27(5), 482-492, 1979. https://doi.org/10.1109/TMTT.1979.1129653
79. J.W. Gewartowski. IEEE Trans. Microwave Theory and Techn. MTT-27(5), 434-442, 1979. https://doi.org/10.1109/TMTT.1979.1129645
80. M.-A. Nicolet. Thin Solid Films 52, 415-443, 1978. https://doi.org/10.1016/0040-6090(78)90184-0
81. L.А. Seidman. OET Ser. 2 no 6(1366), 1988.*
82. J.E. Sundgren. Thin Solid Films 22(2), 21-44, 1985. https://doi.org/10.1016/0040-6090(85)90333-5
83. G. Lemperiere, J.M. Poitevin. Thin Solid Films 111(2), 339-349, 1984. https://doi.org/10.1016/0040-6090(84)90326-2
84. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskii. Techn. Phys. 48(4), 441-448, 2003. https://doi.org/10.1134/1.1568486
85. А.А. Rusakov. X-ray Investigation of Metals, Atomizdat, Moscow, 1977.*
86. G.V. Samsonov, K.I. Portnoi. Refractory Compound Alloys, Oborongiz, Moscow, 1961.*
87. R.B. Kotel’nikov, S.N. Bashlykov, Z.G. Galiakbarov, A.I. Kashtanov. Super-Refractory Elements and Compounds, Metallurgiya, Moscow, 1968.*
88. S.P. Murarka. Silicides for VLSI Application. Academic Press, New York−London, 1983.
89. M. Harris, E. Lugujjo, S.U. Campisano. JVST 12(1), 524-527, 1975. https://doi.org/10.1116/1.568580
90. O.M. Barabash, Yu.N. Koval. Structure and Properties of Metals and Alloys. Naukova Dumka, Kiev, 1986.*
91. Thin Films. Interdiffusion and Reactions (eds. J.M. Poate, K.N. Tu, W. Mayer), Wiley, 1978.
92. R.А. Andrievskii. Uspekhi Khimii 66(1), 57-77, 1997.* https://doi.org/10.1070/RC1997v066n01ABEH000290
93. R.А. Andrievskii, A.V. Ragulya. Nanostructure Materials, Academia, Moscow, 2005.*
94. J. Suni, M. Maenpaa, M.A. Nicolet, M. Luomajaw. J. Electrochem. Soc. 130(5), 1215-1218, 1983. https://doi.org/10.1149/1.2119920
95. D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, E.A. Soloviev, М.Б. Tagaev, О.D. Smiyan, N.S. Boltovets, N.М. Goncharuk, V.A. Krivutsa, V.Е. Chaika. PKOM no 5, 80-84, 1999.*
96. N.S. Boltovets, D.I. Voitsikhovskyi, А.А. Belyaev, R.V. Konakova, V.V. Milenin. PZhE no 2, 29-36, 2002.*
97. V.I. Nefedov. X-ray Spectroscopy of Chemical Compounds. A Handbook. Khimiya, Moscow, 1984.*
98. S. Seal, T. Barr, K. Sobczak, E. Benko. JVST. A15(3), 505-512, 1997. https://doi.org/10.1116/1.580881
99. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko. SQO 4(1), 93-105, 2001.
100. А.А. Chernyshev. The Foundations of Reliability of Semiconductor Devices and ICs, Radio i Svyaz’, Moscow, 1988.*
101. J. Chem, J.A. Barnard. Material Science and Engineering 191, 233-238, 1995. https://doi.org/10.1016/0921-5093(94)09632-7
102. Th.A. Carlson. Photoelectron and Auger Spectroscopy. Plenum Press, New York and London, 1975. https://doi.org/10.1007/978-1-4757-0118-0
103. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi. In: Proc. Third Intern. Euro Conference on Advanced Semicond. Devices and Microsystems. Smolenice Castle, Slovakia, 2000, 441-444.
104. E.S. Meieran, P.A. Flinn, J.R. Caurruthers. Proc. IEEE 75(7), 908-953, 1987. https://doi.org/10.1109/PROC.1987.13826
105. R.M. Waldser, R.W. Benc. Appl. Phys. Lett. 28(10), 624, 1976. https://doi.org/10.1063/1.88590
106. A.E. Gershinskii, A.V. Rzhanov, E.I. Cherepov. Poverkhnost’ no 2, 1-12, 1982.*
107. A.E. Gershinskii, A.V. Rzhanov, E.I. Cherepov. ME 11(2), 83-94, 1982.*
108. C. Calandra, O. Bisi, G. Ottaviani. Surface. Sci. Repts. 4(5/6), 271, 1984. https://doi.org/10.1016/0167-5729(85)90005-6
109. K.N. Tu. Appl. Phys. Lett. 27(4), 221, 1975. https://doi.org/10.1063/1.88436
110. N.S. Boltovets, G.K. Beketov, A.E. Belyaev, R.V. Konakova, V.V. Milenin, A.I. Senkevich, D.I. Voitsikhovskyi. In: Proc. 23rd Internat. Semiconductor Conf., Sinaia, Romania, 2000, 1, 121-124.
111. N.S. Davydova, Yu.Z. Danyushevskii. Diode Microwave Oscillators and Amplifier, Radio i Svyaz’, Moscow, 1986.*
112. M. Ino, T. Makimura, T. Ishibashi, M. Ohmori. Electron. Lett. 115(1), 2-3, 1979.
113. Yu.Z. Danyushevskii. In: Heat Exchange in Electronic Devices, no 4, 3-15, SGU, Saratov, 1976.*
114. K. Chino, Y. Wada. Japan. J. Phys. 13(11), 1675-1677, 1974. https://doi.org/10.1143/JJAP.13.1675
115. K. Chino, Y. Wada, K. Fukuda. J. Jap. Soc. Appl. Phys. 44, Suppl. 1, 149-156, 1975.
116. M.Yu. Filatov. Candidate of Tech. Sci. Thesis, IP AN UkrSSR, Kiev, 1989.*
117. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi. SQO 3(3), 359-370, 2000.
118. T.T. Rossiter. In: Proc. 11th Annual Reliab. Phys. Conf., Las Vegas. New York, 1973, 275-281.
119. Diamond in Electronic Engineering (ed. V.B. Kvasnikov), Energoatomizdat, Moscow, 1990.*
120. C.B. Swan. Proc.IEEE 55, 1617-1618, 1967. https://doi.org/10.1109/PROC.1967.5915
121. А.Т. Baich. ZRE no 6, 142-148, 1971.*
122. Т.D. Ositinskaya. Sverkhtverdye Materialy no 4, 13-16, 1980.*
123. E.A. Burgemeister. Physica B 93(2), 165-179, 1978. https://doi.org/10.1016/0378-4363(78)90123-7
124. Physical Properties of Diamonds: A Handbook (ed. N.V. Novikov), Naukova Dumka, Kiev, 1987.*
125. А.К. Shukhostanov, Т.Kh. Akhmetov, S.I. Volkov, A.M. Schekikhachev. OET Ser. 2 no 5, 1990.*
126. A. Rosen, Ho Pang-Ting, J.B. Klatskin. IEEE Trans. Electron. Dev. 24(2), 159-163, 1977. https://doi.org/10.1109/T-ED.1977.18698
127. L.К. Lyubimova. OET Ser. 2 no 3, 1977.*
128. L.А. Kandidova, S.V. Nosikov, M.Yu. Filatov. ET Ser. 1 no 1 (337), 56-59, 1982.*
129. О.P. Gludkin. ET Ser. 1 no 2, 59-62, 1977.* https://doi.org/10.1080/10889377709388614
130. I.V. Baydalinov. OET Ser. 3 no 1 (174), 1970.*
131. N.V. Rumak, V.V. Khat’ko. Dielectric Films in Solid-State Microelectronics, Navuka i Tekhnika, Minsk, 1990.*
132. V.N. Vertoprakhov, B.М. Kuchumov, Е.G. Sal’man. Composition and Properties of the Si−SiO2 Structures, Nauka SO, Novosibirsk, 1981.*
133. R.А. Muminov, V.Т. Malaeva, S. Rajanov, U. Sirozhov, B. Sapaev, О.М. Tursunkulov. Poverkhnost’ no 9, 76-80, 1999.*
134. A.I. Kurnosov. OET Ser. 7 no 13 (292), 1971.* https://doi.org/10.1016/0022-1694(71)90241-1
135. V.K. Severnyi, E.I. Minsker, I.А. Makarenko, N.V. Varlamova, V.A. Semenova. Obmen Opytom v Radiopromyshlennosti no 5, С.20, 1984.*
136. C.I. Elia. Wall Street J. 22(3), 31-33, 1974
Chapter 6
1. А.Ya. Potemkin, I.E. Satsevich. Effect of Thermal Treatment on the Physical Properties of Silicon, ONTI GIREDMET, Moscow, 1962.*
2. V.G. Litovchenko. Gettering. In: Physics of Solid. An Encyclopaedic Dictionary, 1, 173-174, Naukova Dumka, Kiev, 1996.*
3. V.N. Mordkovich. ET Ser. 2 no 5 (123), 6 (124), 211-221, 1978.* https://doi.org/10.5771/0943-7444-1978-2-123
4. E.I. Verkhovskii. OET Ser. 2 no 8 (838), 1981.*
5. G.Z. Nemtsov, A.I. Pekarev, Yu.D. Chistyakov, A.N. Burmistrov. ZET no 11, 3-63, 1981.*
6. N.V. Bogach, V.A. Gusev, P.G. Litovchenko. PTM no 34, 3-20, 1981.*
7. V.A. Labunov, I.L. Baranov, V.P. Bondarenko, A.M. Dorofeev. ZET no 11, 3-66, 1983.*
8. N.N. Peresvetov, A.V. Veber, L.А. Petrov. ET Ser. 2 no 10 (102), 80-87, 1975.*
9. K. Nauka, J. Lagowski, H.C. Gatos, O. Ueda. J. Appl. Phys. 60(2), 615-621, 1986. https://doi.org/10.1063/1.337457
10. O. Ueda, K. Nauka, J. Lagowski, H.C. Gatos. J. Appl. Phys. 60(2), 622-626, 1986. https://doi.org/10.1063/1.337458
11. V.M. Anischuk, V.A. Gorushko, V.A. Pilipenko, V.N. Ponomar, V.V. Ponaryadov. Physical Basis of Rapid Thermal Treatment. Gettering, Annealing of Ion-Implanted Layers, RTA in the VLSI Technology, BGU, Minsk, 2001.*
12. V.A. Pilipenko. Rapid Thermal Treatments in the VLSI Technology, BGU, Minsk, 2004.*
13. K.V. Ravy. Defects and Impurities in Semiconducting Silicon, Wiley, New York, 1981.
14. G.А. Zelikman, Е.Z. Mazel, F.P. Press, S.V. Fronk. Semiconductor Silicon Diodes and Triodes, Energiya, Moscow, 1963.*
15. Yu.N. Taran, V.Z. Kutsova. In: High-Frequency Metallic and Semiconducting Materials. Proc. 8th Intern. Symposium “High-Frequency Metallic and Semiconducting Materials”, 68-73, NTK MN, Kharkov, 2002.*
16. R.М. Amalskaya, N.Т. Bagraev, L.Е. Klyachkin, V.L. Sukhanov. FTP 26(26), 1004-1007, 1992.*
17. V.F. Strukov, S.S. Khromov, V.I. Astakhov. ME 21(2), 91-93, 1992.*
18. S.P. Novosyadlyi. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature no 2, 39, 1998.*
19. К.L. Enisherlova, Yu.А. Kontsevoi, К.V. Belenov, D.V. Donskoi. ET Ser. 2 no 5 (202), 42-49, 1989.*
20. М.I. Kovalchuk, E.F. Lobanovich, A.N. Petlitskii. ME no 3, 252-255, 1989.*
21. Author’s Certificate USSR 1753894. МКI Н01L21/322. Kharchenko V.A., Stuk А.А., Smirnov B.V., Levshin Е.S., Lobanovich E.F., Petlitskii A.N. 1990. Byulleten’ Izobretenii no 46, .84, 1992.*
22. A.N. Petlitskii, V.N. Ponomar, М.I. Tarasik, A.M. Yanchenko. Izv. Vuzov. Tsvetnaya Metallurgiya no 5, 185-189, 1997.*
23. А.G. Dutov, D.I. Brinkevich, A.N. Petlitskii. Vestnik ANB. Ser. Fiziko-Tekhnicheskie Nauki no 3, 20-26, 1996.*
24. Patent Russia №2094904. МКI Н01L21/322. Taran Yu.N., Kutsova V.Z., Uzlov K.I. 1997.*
25. V.Z. Kutsova, V.V. Patsalyuk, V.M. Khronenko. Teoriya i Praktika Metallurgii no 2, 37, 1997.*
26. Yu.N. Taran, V.Z. Kutsova, К.I. Uzlov, E.S. Falkevich. Izv. AN SSSR. Neorganicheskie Materialy 27(11), 108-112, 1991.*
27. Patent USA N4561171. MKI H01 21/20. Schlosser V. Shell Austria Aktiengesellschaft. 1985.
28. Patent GDR N153939. MKI 3(51) HOI L 21/322. Kerkow H., Kreysch G., Maass K. Humboldt-Universität. Berlin. 1982.
29. Patent GDR N156453. MKI 3(51) HOI L 21/302. Fischer A., Schlote J., Frahnow D. Kranig S. Institut f. Phys. der Werkstoffbearb. Berlin. 1981.
30. Patent GDR N214490. MKI 3(51) HOI L 21/322. Schlapak H., Scholz G., Baumann K. VEB Gleichrichterwerk. Stahnsdorf. 1984.
31. Patent GDR N226430AI. MKI 4(51) HOI L 21/322. Nitzsche W., Kirscht F., Riepel G., Dziesiety J., Hengelhaupt Zu. VEB Mikroelektronik “Karl Marx”. Erfurt. 1985.
32. Patent FRG N3117202 MKI HOI L 21/26, 21/324, 29/74. Berndt D. Brown Boveri and Cie AG. 1982.
33. Patent GDR N156408. MKI 3(51) HO1I L 21/265. Dziesiety J., Ellmer K., Riepel G., Baehr R. Humboldt-Universität. Berlin. 1982.
34. Patent USA N4539050 MKI HOI L 21/268. Kramler J., Kuhnenfeld F., Gerber H. Wacker Chemitronic Gesellschaft für Electronic Grundstoffe. 1983.
35. V.A. Kozlov. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, Leningrad, Ioffe FTI AN SSSR, 1988.*
36. B.N. Romanyuk. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, Kiev, IP AN UkrSSR, 1992.*
37. Ya. Tarui. Fundamentals of VLSI Technology, Radio i Svyaz’, Moscow, 1985.* https://doi.org/10.1007/978-3-642-69192-8
38. S.S. Gorelik, М.Ya. Dashevskii. Materials Science of Semiconductors and Dielectrics, Metallurgiya, Moscow, 1988.*
39. S.M. Sze. VLSI Technology, McGraw-Hill Inc., 1983.
40. Solar Energy Conversion. Solid-State Physics Aspects (ed. B.O. Seraphin), Springer-Verlag, Berlin−New York, 1979.
41. Yu.А. Evseev. Semiconductor Devices for Power High-Voltage Converter Installations, Energiya, Moscow, 1978.*
42. G.Ya. Krasnikov, N.A. Zaitsev. Silicon−Silicon Dioxide System in Submicron VLSI, Tekhnosfera, Moscow, 2003.*
43. V.G. Litovchenko, B.N. Romanyuk, V.P. Shapovalov, G.K. Zholudev, V.I. Dumbrov, I.V. Rudskoi. OPT no 10, 84-95, 1986.*
44. V.G. Litovchenko, V.G. Popov, B.N. Romanyuk, V.V. Andrievskii, I.V. Rudskoi, D.N. Moskal. OPT no 13, 85-88, 1988.*
45. V.G. Litovchenko, B.N. Romanyuk, V.G. Popov, I.V. Rudskoi, G.I. Khokhotva. OPT no 16, 37-42, 1989.*
46. V.G. Litovchenko, B.N. Romanyuk. FTP 17(2), 150-153, 1983.*
47. B.N. Romanyuk. OPT no 15, 1-8, 1989.*
48. V.К. Prokof’eva, Е.B. Sokolov, Zh.М. Sergeevа, М.H. Makeev. ET Ser. 6 no 6 (260), 26-29, 1991.*
49. V.К. Prokof’eva. ET Ser. 6 no 6 (260), 25-26, 1991.*
50. V.A. Brazhnik, Т.А. Dolgova, V.N. Leikin, L.Yu. Pankan, А.B. Spiridonov. ET Ser. 3 no 1 (117), 92-96, 1986.*
51. N.Т. Bagraev, L.Е. Klyachkin, A.M. Malyarenko, V.L. Sukhanov. FTP 25(4), 644-654, 1991.*
52. N.Т. Bagraev, L.Е. Klyachkin, A.M. Malyarenko, I.S. Polovtsev, V.L. Sukhanov. FTP 24(9), 1557-1562, 1990.*
53. N.Т. Bagraev, L.Е. Klyachkin, A.M. Malyarenko, I.S. Polovtsev, V.L. Sukhanov. FTP 24(9), 1563-1573, 1990.*
54. E.I. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.М. Shmidt. FTP 16(2), 207-211, 1982.*
55. А.Т. Gorelenok, V.L. Kryukov, G.P. Furmanov. PZhTF 20(13), 60-65, 1994.*
56. F.D. Kasimov, D.А. Sechenov, F.G. Agaev, A.M. Svetlichnyi, O.A. Ageev. Activated Processes of the Microelectronic Technology (ed. F.D. Kasimov), ELM, Baku, 2000.*
57. Z.А. Iskander-zadeh, М.G. Abbasov, F.D. Kasimov. Uchenye Zapiski AzTU 7(3), 239-242, 1998.*
58. V.F. Strukov, S.S. Khromov, V.G. Astakhov. ME 21(2), 91-93, 1992.*
59. А.G. Zakharov, N.A. Krakotets. Izv. TRTU (Taganrog) no 1, 169-170, 2002.*
60. N. Gerasimenko, Yu. Parkhomenko. Silicon – The Material for Nanoelectronics, Tekhnosfera, Moscow, 2007.*
61. A. Efremov, A. Evtukh, N. Klyui, V. Litovchenko, V. Popov, Yu. Rassamakin, A. Sarikov, Ch. Hässler, W. Koch. Solid State Phenomena 82-84, 719-723, 2001. https://doi.org/10.4028/www.scientific.net/SSP.82-84.719
62. A.A. Efremov, A.V. Sarikov. In: Extended Abstracts of the Second Int. Conf. “Porous Semiconductors-Science and Technology”. Madrid. 2000. P.172.
63. A.V. Sarikov. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP NANU, Kiev, 2002.*
64. N.A. Filippenko. Author’s Synopsis of the Candidate of Tech. Sci. Thesis, TGRU, Taganrog, 2002.*
65. A.N. Petlitskii. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, BGU, Minsk, 2004.*
66. B.N. Romanyuk, V.G. Popov, V.G. Litovchenko, А. Мisiyuk, А.А. Evtukh, N.I. Klyui, V.P. Mel nik. FTP 29(1), 166-173, 1995.*
67. Proc. 11th Intern. Conf. “Gettering and Defect Engineering in Semiconductor Technology” GADEST. 2005.
68. V.V. Bolotov, V.A. Korotchenko, А.P. Mamontov, A.V. Rzhanov, L.S. Smirnov, S.S. Shaimiev. FTP 14(11), 2257-2260, 1980.*
69. О.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.G. Litovchenko, N.N. Soldatenko, Yu.А. Tkhorik, M.Yu. Filatov, V.I. Shakhovtsov. FTP 17(7), 1349-1351, 1983.*
70. О.Yu. Borkovskaya, S.А. Grusha, N.L. Dmitruk, A.M. Evstigneev, N.A. Klebanova, R.V. Konakova, A.N. Krasiko, К.А. Ismailov, I.К. Sinischuk, М.Е. Lisogorskii. ZhTF 55(10), 1977-1982, 1985.*
71. I.P. Chernov, А.P. Mamontov, V.A. Korotchenko. FTP 14(11), 2271-2273, 1980.*
72. N.L. Dmitruk, V.G. Litovchenko. OPT no 3, 13-22, 1983.*
73. О.Yu. Borkovskaya, N.L. Dmitruk, V.G. Litovchenko, О.N. Mischuk. FTP 23(2), 207-212, 1989.*
74. Yu.S. Kleinfeld, R.V. Konakova, V.F. Sinkevich, A.A. Pavlenko. Electrotechn. Čas. 44(6), 177- 178, 1993.
75. Physical Processes on Irradiated Semiconductors (ed. L.S. Smirnov), Nauka SО, Novosibirsk, 1977.*
76. V.S. Vavilov, I.А. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices, Atomizdat, Moscow, 1969.*
77. N.D. Langbain, Е.N. Shelopin. FTP 18(5), 808-811, 1984.* https://doi.org/10.1177/106002808401801007
78. W. Corbett. Surf. Sci. 90(2), 205-239, 1979. https://doi.org/10.1016/0039-6028(79)90340-6
79. N.S. Boltovets, R.V. Konakova, А.А. Pavlenko. ET Ser. 7 no 4 (149), 59-60, 1988.*
80. А.А. Pavlenko. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, Kiev T.G. Shevchenko University, Kiev, 1993.*
81. А.А. Pavlenko. ET Ser. 7 no 5 (168), 44-51, 1991.*
82. Author’s Certificate USSR №1110342. MKI H01L 21/26. N.S. Boltovets, R.V. Konakova, А.А. Pavlenko. 1984. (Priority 4.05.1982).*
83. N.S. Boltovets, К.А. Ismailov, R.V. Konakova, М.B. Tagaev. ZhTF 68(10), 131-132, 1998.*
84. S.T. Sah, R.N. Noyce, W. Shockley. Proc. IRE 45(9), 1228-1243, 1957. https://doi.org/10.1109/JRPROC.1957.278528
85. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.
86. W.C. Till, J.T. Luxon. Integrated Circuits: Materials, Devices, and Fabrication, Prentice-Hall Inc., Englewood Cliffs, N.J., 1982.
87. V.P. Grigorenko, P.G. Dermenzhi, V.A. Kuzmin, Т.Т. Mnatsakanov. Simulation and Automation of Design of Power Semiconductor Devices, Energoatomizdat, Moscow, 1988.*
88. S.V. Bulyarskii, N.S. Grushko. Physical Principles of Functional Diagnostics of p-n Junctions with Defects, Shtiintsa, Kishinev, 1992.*
89. Е.V. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.М. Shmidt. FTP 16(2), 207- 211, 1982.*
90. Е.V. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.М. Shmidt, М.V. Drozdova. PZhTF 6(14), 874-877, 1980.*
91. L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.М. Shmidt, B.S. Yavich. PZhTF 5(1), 11- 13, 1979.*
92. L.Е. Klyachkin, L.B. Lopatina, A.M. Malyarenko, A.V. Nalivkin, V.L. Sukhanov, V.V. Tuchkevich. FTP 17(9), 1648-1651, 1983.*
93. N.S. Boltovets, R.V. Konakova, M.B. Tagaev, T.V. Torchinskaya, L.V. Shcherbina. Functional Materials 4(4), 568-571, 1997.
94. Author’s Certificate USSR №682048. N.S. Boltovets, V.A. Krivutsa, А.А. Pavlenko.*
95. О.Yu. Borkovskaya, L.G. Gassanov, S.А. Grusha, N.L. Dmitruk, F. Dubecky, A.M. Evstigneev, R.V. Konakova, Yu.А. Tkhorik, L.S. Khazan, Т.М. Khakimov, V.I. Shakhovtsov. Preprint no 25, IF AN UkrSSR, Kiev, 1988.*
96. E.F. Venger, M. Grendel, V. Daniška, R.V. Konakova, I.V. Prokopenko, Yu.A. Tkhorik, L.S. Khazan. Structural Relaxation in Semiconductor Crystals and Device Structures. Phoenix, Kiev, 1994.*
97. Yu. Breza, M. Vesely, I.Yu. Il’in, K.A. Ismailov, R.V. Konakova, J. Liday, V.V. Milenin, A.A. Pav lenko, I.V. Prokopenko, V.A. Statov, Yu.A. Tkhorik, L.S. Khazan. In: Proc. 5th Intern. Symposium on Recent Advances in Microwave Technology, Kiev, Ukraine, Sept. 11-16, 1995, 844-927.*
98. Author’s Certificate USSR №1107712. MKI H01L 21/26. N.S. Boltovets, R.V. Konakova, А.А. Pavlenko. 1984. (Priority: 4.05.1982).*
99. I.V. Grekhov, Yu.N. Serezhkin. Avalanche breakdown of p-n Junction in Semiconductors, Energiya, Leningrad, 1980.*
100. Author’s Certificate USSR № 1186027. MKI HO1L 21/263. N.S. Boltovets, R.V. Konakova,А.А. Pavlenko. 1985. (Priority: 11.03.1984).*
101. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*
102. Author’s Certificate USSR №1192556 MKI HO1L 27/08. N.S. Boltovets, R.V. Konakova, А.А. Pavlenko. 1985. (Priority: 11.03.1984).*
103. Author’s Certificate USSR №1531777. MKI HO1L 31/18. К.А. Ismailov, R.V. Konakova, А.А. Pavlenko, E.A. Soloviev, Yu.А. Tkhorik, V.I. Faynberg, L.S. Khazan. 1989. (Priority: 3.11.1987).*
104. Author’s Certificate USSR №1762697. MKI HO1L 21/326. К.А. Ismailov, R.V. Konakova, А.А. Pavlenko, E.A. Soloviev, Yu.А. Tkhorik, V.I. Faynberg, L.S. Khazan. 1992 (Priority: 6.04.1990).*
105. Author’s Certificate USSR №1382312 MKI HO1L 21/326. S.I. Volkov, A.V. Davydova, А.P. Derevenko, R.V. Konakova, А.А. Pavlenko, Yu.А. Tkhorik, V.I. Faynberg. 1987. (Priority: 19.05.1986).*
106. G. Garyagdyev. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, VU, Vilnius, 1990.*
107. I.V. Ostrovskii, А.B. Nadtochii, А.А. Podolyan. FTP 36(4), 389-391, 2002.* https://doi.org/10.1134/1.1469179
108. P.B. Parchinskii, S.I. Vlasov, L.G. Ligay, О.Yu. Kzukina. PZhTF 29(9), 83-88, 2003.*
109. V.N. Zaveryukhin, V.D. Krevchik, R.А. Muminov, А.Sh. Shamagdiev. FTP 20(3), 525-528, 1986.*
110. I.V. Ostrovskii. Acoustoluminescence and Crystal Defects, Vyscha Shkola, Kiev, 1993.*
111. О.Ya. Olikh. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, T.G. Shevchenko KNU, Kiev, 2000.*
112. О.Ya. Olikh, I.V. Ostrovskii. FTT 44(7), 1198-1202, 2002.* https://doi.org/10.1023/A:1014766019494
113. А.P. Zdebskii, V.L. Korchnaya, Т.V. Torchinskaya, М.К. Sheinkman. PZhTF 12(2), 76-81, 1986.*
114. А.P. Zdebskii, М.I. Lisyanskii, N.B. Lukyanchikova, М.К. Sheinkman. PZhTF 13(16), 1009- 1013, 1987.*
115. Author’s Certificate USSR №1477177. MKI HO1 L 21/304. V.L. Gromashevskii, К.А. Ismailov, R.V. Konakova, Yu.А. Tkhorik, N.P. Tat’yanenko, V.I. Faynberg, N.S. Khilimova. IP AN UkrSSR 1986.*
116. V.L. Gromashevskii, А.P. Derevyanko, К.А. Ismailov, R.V. Konakova, М.B. Tagaev, N.P. Tat’yanenko. PKOM no 6, 132-135, 1996.*
117. I.B. Ermolovich, V.V. Milenin, R.V. Konakova, I.V. Prokopenko, V.L. Gromashevskii. PZhTF 22(6), 33-36, 1996.*
118. I.B. Ermolovich, V.V. Milenin, R.V. Konakova, L.N. Primenko, I.V. Prokopenko, V.L. Gromashevskii. FTP 31(4), 503-508, 1997.* https://doi.org/10.1134/1.1187177
119. Yu.V. Bykov, A.G. Eremeev, V.I. Pashkov, V.A. Perevoschikov, V.D. Skupov. Deposited at VINITI (no 2322-В91) 1991.*
120. V.I. Pashkov, V.A. Perevoschikov, V.D. Skupov. PZhTF 20(8), 14-18, 1994.*
121. D.E. Abdurakhimov, V.L. Vereschagin, V.P. Kalinushkin, V.A. Nikishin, M.G. Ploppa, M.D. Rai zer. Kratkie Soobscheniya po Fizike FIAN no 6, 27-29. 1991.*
122. D.E. Abdurakhimov, F.Sh. Vakhidov, V.L. Vereschagin, V.P. Kalinushkin, M.G. Ploppa, M.D. Rai zer ME 20(1), 21-25. 1991.* https://doi.org/10.1108/eb042865
123. D.E. Abdurakhimov, P.N. Bochikashvili, V.L. Vereschagin, V.P. Kalinushkin, A.L, Obukhov, M.G. Ploppa, M.D. Raizer, E.P. Rau. ME 21(1), 82-89, 1992.*
124. Yu.V. Bykov, A.G. Eremeev, N.A. Zharova, I.V. Plotnikov, К.I. Rybakov, М.N. Drozdov, Yu.N. Drozdov, V.D. Skupov. Izv. Vuzov. Radiofizika 46(8-9), 836-843, 2003.* https://doi.org/10.1023/B:RAQE.0000025008.97954.1c
125. М.N. Levin, G.V. Semenova, A.V. Tatarintsev, О.N. Shumskaya. PZhTF 31(17), 89-94, 2005.*
126. М.N. Levin, G.V. Semenova, Т.P. Sushkova, V.V. Postnikov, B.L. Agapov. FTT 45(4), 609-612, 2003.* https://doi.org/10.1134/1.1568998
127. М.N. Levin, A.V. Tatarintsev, O.A. Kostsova, A.M. Kostsov. ZhTF 73(10), 85-87, 2003.*
128. М.N. Levin, G.V. Semenova, Т.P. Sushkova, E.A. Dolgopolova, V.V. Postnikov. PZhTF 28(19), 50-55, 2002.* https://doi.org/10.1134/1.1519017
129. V.I. Belyavskii, Yu.V. Ivankov, М.N. Levin. FTT 48(7), 1255-1259, 2006.* https://doi.org/10.1134/S106378340607018
130. А.L. Danilyuk, A.I. Nareyko. Poverkhnost’ no 9, 27-33, 1996.*
131. V.N. Davydov, E.A. Loskutova, Е.P. Nayden. FTP 23(9), 1596-1600, 1989.*
132. N.V. Kukushkin, S.N. Postnikov, Yu.А. Terman, V.M. Kedyarkin. ZhTF 55(10), 2083-2084, 1985.*
133. М.N. Levin, B.А. Zon. ZhETF 11(4), 1373-1397, 1997.*
134. Yu.L. Kol’chenko. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, T.G. Shevchenko KNU, Kiev, 2006.*
135. G.I. Distler, V.M. Kanevskii, V.V. Moskvin, S.N. Postnikov, L.А. Ryabinin, V.P. Sidorov, G.D. Shnyrev. DAN SSSR 268(3), 591-593, 1983.*
136. А.G. Kadmenskii, S.G. Kadmenskii, М.N. Levin, V.M. Maslovskii, V.Е. Chernyshev. PZhTF 19(3), 41-45, 1993.*
137. М.N. Levin, Yu.О. Lichmanov, V.M. Maslovskii. PZhTF 20(4), 27-31, 1994.*
138. V.M. Maslovskii, Yu.А. Klimov, N.S. Samsonov, Е.V. Simanovich. FTP 28(5), 772-777, 1994.*
139. М.N. Levin, G.V. Semenova, Т.P. Sushkova. DAN, 388(5), 608-610, 2003.*
140. Yu.А. Klimov, V.M. Maslovskii, К.V. Kholodnov. ET Ser. 3 no 5 (144), 22-26, 1991.*
141. Yu.А. Klimov, V.M. Maslovskii, V.V. Tarasenko. ET Ser. 3 no 5 (139), 20-25, 1990.* https://doi.org/10.1007/BF02196315
142. V.M. Maslovskii, V.V. Minaev, S.V. Naumov, S.N. Postnikov. ET Ser. 3 no 5 (134), 59-60, 1989.*
143. V.A. Novichikhin, S.N. Postnikov, L.А. Ryabinin. A Plant for Pulse Magnetic Treatment of Materials, NIIM GGU, Gor’ky, 1983.*
Conclusion
1. N. Gerasimenko, Yu. Parkhomenko. Silicon – The Material for Nanoelectronics, Tekhnosfera, Moscow, 2007.*
2. V. Yudintsev. Electronics: Science. Technology. Business no 3, 124-129, 2008; no 4, 108-113, 2008.*