Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices

Authors:

Rudenko Tamara

doctor of sciences in physics and mathematics, leading scientific researcher of the Department of the Surface Physics and Nanophotonics at the V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 41, 03028 Kyiv, Ukraine;

 

Nazarov Oleksiy (Alexei)

doctor of sciences in physics and mathematics, professor, the head of the Department of the Surface Physics and Nanophotonics at the V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 41, 03028 Kyiv Ukraine;

professor of the Department of General Physics and Modeling of Physical Processes, Faculty of Physics and Mathematics, National Technical University of Ukraine “Igor Sikorsky KPI”, Prospect Peremogy 37, 03056 Kyiv, Ukraine,

ORCID ID 0000-0002-1823-8290

 

Lysenko Volodymyr

doctor of sciences in physics and mathematics, corresponding member of the National Academy of Sciences of Ukraine, principal researcher of the Department of the Surface Physics and Nanophotonics at the V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 41, 03028 Kyiv, Ukraine;

 

Reviewers:

Skryshevsky Valeriy

professor, doctor of sciences in physics and mathematics, head of Department of the Nanophysics of Condensed Matter at the Educational and Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine;

ORCID ID 0000-0003-0249-5556

 

Evtukh Anatoliy

professor, doctor of sciences in physics and mathematics, leading researcher of V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine;

ORCID ID 0000-0003-3527-9585

 

Affiliation:

Project: Scientific book

Year: 2024

Publisher: PH "Naukova Dumka"

Pages: 264

DOI:

https://doi.org/10.15407/978-966-00-1884-6

ISBN: 978-966-00-1884-6

Language: Ukrainian

How to Cite:

Rudenko, T., Nazarov, O., Lysenko, V. (2024) Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices. Kyiv, Naukova Dumka. 264p. [in Ukrainian].

Abstract:

This book is devoted to one of the most important field of modern nanoelectronics, namely, nanoelectronic devices based on Silicon-on-Insulator (SOI) structures, and more specifically, to the physics and electrical characterization of these devices. The principal advantages of SOI devices over bulk-Si counterparts are described, and the main areas of their application are outlined. Particular attention is given to the advanced SOI-based structures for nanoscale metal-oxide-semiconductor (MOS) field-effect transistors (FETs), namely: ultra-thin-body SOI MOSFETs, FinFETs, nanowire multi-gate MOSFETs, and junctionless nanowire MOSFETs. Special electrical properties of these nanotransistor structures, associated with their specific architecture and nanometer dimensions, and methods for the determination of their electrical parameters are considered.

The book includes research results of the world-famous scientists in the silicon-on-insulator field, but mostly it presents the results of scientific research by the authors of the monograph published in leading international journals.

It should be noted that so far no monographs on physics and diagnostics of silicon-on-insulator devices have been published in Ukraine, although silicon-on-insulator is currently recognized as the most advanced and most promising technology for fabricating high-speed, low voltage integrated circuits and key electronic components for modern portable electronic devices such as laptops, mobile phones, smartphones, etc.

The book is intended for scientific and engineering workers specializing in the semiconductor electronics. It can also be useful for university teachers, students, and graduate students who are interested in the current state of micro- and nanoelectronics.

Keywords:

Silicon-on-Insulator structures, SOI transistors, fully depleted SOI MOSFETs, FinFETs, Junctionless SOI nanowire MOSFETs, electrical characterization

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For Part 2

For Chapter 2.1
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